1. A novel silicon heterojunction IBC process flow using partial etching of doped a‐Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%. (8th January 2019) Authors: Sivaramakrishnan Radhakrishnan, Hariharsudan; Uddin, M.D. Gius; Xu, Menglei; Cho, Jinyoun; Ghannam, Moustafa; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef Journal: Progress in photovoltaics Issue: Volume 27:Number 11(2019) Page Start: 959 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗