1. Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced Ion (1.7X at VOV = VDS = 0.5 V) by Ge0.85Si0.15 channels. (31st March 2020) Authors: Liu, Yi-Chun; Huang, Yu-Shiang; Lu, Fang-Liang; Ye, Hung-Yu; Tu, Chien-Te; Liu, C W Journal: Semiconductor science and technology Issue: Volume 35:Number 5(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗