Author/Creator: Triozon, F. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Triozon, F.

1. Effect of doping on Al2O3/GaN MOS capacitance. (August 2022)

Authors:: Rrustemi, B.; Piotrowicz, C.; Jaud, M-A.; Triozon, F.; Vandendaele, W.; Mohamad, B.; Gwoziecki, R.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 194(2022)
Page Start:
Record Type:: Journal Article
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2. Electronic structure investigation of Al0.7Ga0.3As/GaAs nanometric heterostructures by Kelvin force microscopy. Issue 8 (18th January 2016)

Authors:: Pouch, S.; Triozon, F.; Chevalier, N.; Mélin, T.; Niquet, Y.-M.; Borowik, Ł.
Journal:: RSC advances
Issue:: Volume 6:Issue 8(2016)
Page Start:: 6782
Record Type:: Journal Article
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3. Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements. (March 2017)

Authors:: Kriso, C.; Triozon, F.; Delerue, C.; Schneider, L.; Abbate, F.; Nolot, E.; Rideau, D.; Niquet, Y.-M.; Mugny, G.; Tavernier, C.
Journal:: Solid-state electronics
Issue:: Volume 129(2017)
Page Start:: 93
Record Type:: Journal Article
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4. Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application. (December 2021)

Authors:: Aouad, M.; Poiroux, T.; Martinie, S.; Triozon, F.; Vinet, M.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 186(2021)
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Record Type:: Journal Article
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5. Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model. (November 2016)

Authors:: Pelloux-Prayer, J.; Cassé, M.; Triozon, F.; Barraud, S.; Niquet, Y.-M.; Rouvière, J.-L.; Faynot, O.; Reimbold, G.
Journal:: Solid-state electronics
Issue:: Volume 125(2016)
Page Start:: 175
Record Type:: Journal Article
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6. Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model. (November 2016)

Authors:: Pelloux-Prayer, J.; Cassé, M.; Triozon, F.; Barraud, S.; Niquet, Y.-M.; Rouvière, J.-L.; Faynot, O.; Reimbold, G.
Journal:: Solid-state electronics
Issue:: Volume 125(2016)
Page Start:: 175
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗