Author/Creator: Tomabechi, Shuichi - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Tomabechi, Shuichi

1. Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy. (4th April 2016)

Authors:: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Tomabechi, Shuichi; Nakamura, Norikazu; Watanabe, Keiji
Journal:: Japanese journal of applied physics
Issue:: Volume 55:Number 5(2016:May)Supplement
Page Start:
Record Type:: Journal Article
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2. Direct observation of nanometer‐scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures. Issue 4 (21st January 2016)

Authors:: Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu
Journal:: Physica status solidi
Issue:: Volume 213:Issue 4(2016:Apr.)
Page Start:: 883
Record Type:: Journal Article
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3. Origin of unintentional gallium incorporation into AlN spacer layer grown by metalorganic vapor phase epitaxy. Issue 2 (4th October 2016)

Authors:: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Tomabechi, Shuichi; Nakamura, Norikazu
Journal:: Physica status solidi
Issue:: Volume 254:Issue 2(2017)
Page Start:: n/a
Record Type:: Journal Article
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4. Tensile strain‐induced formation of micro‐cracks for AlGaN/GaN heterostructures. Issue 5 (6th February 2013)

Authors:: Kotani, Junji; Tomabechi, Shuichi; Miyajima, Toyoo; Nakamura, Norikazu; Kikkawa, Toshihide; Watanabe, Keiji; Imanishi, Kenji; Krishna, Sanjay; Plis, Elena
Journal:: Physica status solidi
Issue:: Volume 10:Issue 5(2013:May)
Page Start:: 808
Record Type:: Journal Article
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