1. The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles. (1st May 2022) Authors: Wada, Ryota; Nagayama, Tsutomu; Tokoro, Nobuhiro; Kuroi, Takashi; Das, Hrishikesh; Sunkari, Swapna; Justice, Joshua Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗