1. Homoepitaxial growth of GaN crystals by Na-flux dipping method. (2nd September 2015) Authors: Sato, Taro; Nakamura, Koshi; Imanishi, Masayuki; Murakami, Kosuke; Imabayashi, Hiroki; Takazawa, Hideo; Todoroki, Yuma; Matsuo, Daisuke; Imade, Mamoru; Maruyama, Mihoko; Yoshimura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 54:Number 10(2015:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗