1. Ultra high voltage MOS controlled 4H-SiC power switching devices. (28th July 2015) Authors: Ryu, S; Capell, C; Van Brunt, E; Jonas, C; O'Loughlin, M; Clayton, J; Lam, K; Pala, V; Hull, B; Lemma, Y; Lichtenwalner, D; Zhang, Q J; Richmond, J; Butler, P; Grider, D; Casady, J; Allen, S; Palmour, J; Hinojosa, M; Tipton, C W Journal: Semiconductor science and technology Issue: Volume 30:Number 8(2015:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗