1. Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor. (7th April 2015) Authors: Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 54:Number 5(2015:May) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas. (30th April 2015) Authors: Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 54:Number 6(2015:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Improvement of crystallinity of GaN layers grown using Ga2O vapor synthesized from liquid Ga and H2O vapor. (4th April 2016) Authors: Yamaguchi, Yohei; Taniyama, Yuuki; Takatsu, Hiroaki; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Isemura, Masashi; Mori, Yusuke Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗