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Author/Creator Tanabe, A.

2. Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors. (September 2015)

Authors:
Mizubayashi, W.; Fukuda, K.; Mori, T.; Endo, K.; Liu, Y.X.; Matsukawa, T.; O'uchi, S.; Ishikawa, Y.; Migita, S.; Morita, Y.; Tanabe, A.; Tsukada, J.; Yamauchi, H.; Masahara, M.; Ota, H.
Journal:
Solid-state electronics
Issue:
Volume 111(2015)
Page Start:
62
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

3. Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors. (September 2015)

Authors:
Mizubayashi, W.; Fukuda, K.; Mori, T.; Endo, K.; Liu, Y.X.; Matsukawa, T.; O'uchi, S.; Ishikawa, Y.; Migita, S.; Morita, Y.; Tanabe, A.; Tsukada, J.; Yamauchi, H.; Masahara, M.; Ota, H.
Journal:
Solid-state electronics
Issue:
Volume 111(2015)
Page Start:
62
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗