1. Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure. (29th May 2019) Authors: Rudinsky, Mikhail; Yakovlev, Eugene; Talalaev, Roman; Novak, Tomas; Kostelnik, Petr; Sik, Jan Journal: Japanese journal of applied physics Issue: Volume 58:Number SC(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Progress in Modeling of III-Nitride MOVPE. Issue 3 (August 2020) Authors: Dauelsberg, Martin; Talalaev, Roman Journal: Progress in crystal growth and characterization of materials Issue: Volume 66:Issue 3(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗