Author/Creator: Takhar, Kuldeep - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Takhar, Kuldeep

1. Impact of wet-oxidized Al2O3/AlGaN interface on AlGaN/GaN 2-DEGs. (2nd March 2017)

Authors:: Meer, Mudassar; Majety, Sridhar; Takhar, Kuldeep; Ganguly, Swaroop; Saha, Dipankar
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 4(2017:Apr.)
Page Start:
Record Type:: Journal Article
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2. Improved Ohmic contact to GaN and AlGaN/GaN two‐dimensional electron gas using trap assisted tunneling by B implantation. Issue 5 (20th March 2015)

Authors:: Upadhyay, Pankaj; Meer, Mudassar; Takhar, Kuldeep; Khachariya, Dolar; Kumar S, Akhil; Banerjee, Debashree; Ganguly, Swaroop; Laha, Apurba; Saha, Dipankar
Journal:: Physica status solidi
Issue:: Volume 252:Issue 5(2015:May)
Page Start:: 989
Record Type:: Journal Article
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3. Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors. (May 2017)

Authors:: Takhar, Kuldeep; Meer, Mudassar; Upadhyay, Bhanu B.; Ganguly, Swaroop; Saha, Dipankar
Journal:: Solid-state electronics
Issue:: Volume 131(2017)
Page Start:: 39
Record Type:: Journal Article
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4. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts. (August 2016)

Authors:: Takhar, Kuldeep; Akhil Kumar, S; Meer, Mudassar; Upadhyay, Bhanu B.; Upadhyay, Pankaj; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar
Journal:: Solid-state electronics
Issue:: Volume 122(2016)
Page Start:: 70
Record Type:: Journal Article
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5. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts. (August 2016)

Authors:: Takhar, Kuldeep; Akhil Kumar, S; Meer, Mudassar; Upadhyay, Bhanu B.; Upadhyay, Pankaj; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar
Journal:: Solid-state electronics
Issue:: Volume 122(2016)
Page Start:: 70
Record Type:: Journal Article
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6. Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs. (March 2018)

Authors:: Upadhyay, Bhanu B.; Takhar, Kuldeep; Jha, Jaya; Ganguly, Swaroop; Saha, Dipankar
Journal:: Solid-state electronics
Issue:: Volume 141(2018)
Page Start:: 1
Record Type:: Journal Article
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