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41. High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing. Issue 14 (4th February 2020)

42. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy. (16th December 2016)

44. High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy. (26th November 2020)

47. Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs. Issue 1 (9th November 2021)

49. Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition. Issue 7 (27th November 2019)

50. Improvement of light extraction efficiency of 350‐nm emission UV light‐emitting diodes. Issue 3 (10th March 2014)