1. A Large-Size HfO2 Based RRAM Structure Suitable for Integration of One RRAM with One InGaZnO Thin Film Transistor for Large-Area Applications. (26th November 2021) Authors: Li, Y. B.; Zhang, J.; Sun, J. X.; Chen, T. P. Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 11(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗