1. Abnormal threshold voltage shift caused by trapped holes under hot-carrier stress in a-IGZO TFTs. (13th December 2019) Authors: Shao, Jingjing; Su, Wan-Ching; Chang, Ting-Chang; Chen, Hong-Chih; Zhou, Kuan-Ju; Lu, I-Nien; Tu, Yu-Fa; Shih, Yu-Shan; Tsai, Tsung-Ming; Lien, Chen-Hsin; Yang, Jianwen; Zhang, Qun Journal: Journal of physics Issue: Volume 53:Number 8(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of mechanical-strain-induced defect generation on the performance of flexible amorphous In–Ga–Zn–O thin-film transistors. (4th November 2016) Authors: Liao, Po-Yung; Chang, Ting-Chang; Su, Wan-Ching; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-Yi; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan Journal: Applied physics express Issue: Volume 9:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Enhancing LiAlOX synaptic performance by reducing the Schottky barrier height for deep neural network applications. Issue 45 (9th October 2020) Authors: Fu, Yaoyao; Dong, Boyi; Su, Wan-Ching; Lin, Chih-Yang; Zhou, Kuan-Ju; Chang, Ting-Chang; Zhuge, Fuwei; Li, Yi; He, Yuhui; Gao, Bin; Miao, Xiang-Shui Journal: Nanoscale Issue: Volume 12:Issue 45(2020) Page Start: 22970 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigating two-stage degradation of threshold voltage induced by off-state stress in AlGaN/GaN HEMTs. (7th January 2022) Authors: Lin, Yu-Shan; Chen, Yi-Lin; Chang, Ting-Chang; Ciou, Fong-Min; Zhu, Qing; Tai, Mao‐Chou; Su, Wan-Ching; Kuo, Ting-Tzu; Chen, Kuan-Hsu; Zhu, Jie-Jie; Mi, Min-Han; Ma, Xiao-Hua; Hao, Yue Journal: Semiconductor science and technology Issue: Volume 37:Number 2(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗