1. Fabrication and characterization of GaN HEMTs grown on SiC substrates with different orientations. (May 2021) Authors: Su, Chung-Wang; Wang, Tong-Wen; Wu, Meng-Chyi; Ko, Cheng-Jung; Huang, Jun-Bin Journal: Solid-state electronics Issue: Volume 179(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗