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Author/Creator Strasser, G.

1. Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors. (November 2016)

Authors:
Capriotti, M.; Bahat Treidel, E.; Fleury, C.; Bethge, O.; Ostermaier, C.; Rigato, M.; Lancaster, S.L.C.; Brunner, F.; Detz, H.; Hilt, O.; Würfl, J.; Pogany, D.; Strasser, G.
Journal:
Solid-state electronics
Issue:
Volume 125(2016)
Page Start:
118
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

2. Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors. (November 2016)

Authors:
Capriotti, M.; Bahat Treidel, E.; Fleury, C.; Bethge, O.; Ostermaier, C.; Rigato, M.; Lancaster, S.L.C.; Brunner, F.; Detz, H.; Hilt, O.; Würfl, J.; Pogany, D.; Strasser, G.
Journal:
Solid-state electronics
Issue:
Volume 125(2016)
Page Start:
118
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

3. Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. (March 2016)

Authors:
Meneghini, M.; Hilt, O.; Fleury, C.; Silvestri, R.; Capriotti, M.; Strasser, G.; Pogany, D.; Bahat-Treidel, E.; Brunner, F.; Knauer, A.; Würfl, J.; Rossetto, I.; Zanoni, E.; Meneghesso, G.; Dalcanale, S.
Journal:
Microelectronics and reliability
Issue:
Volume 58(2016)
Page Start:
177
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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