1. Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy. Issue 14 (1st July 2016) Authors: Downey, B.P.; Katzer, D.S.; Nepal, N.; Meyer, D.J.; Storm, D.F.; Wheeler, V.D.; Hardy, M.T. Journal: Electronics letters Issue: Volume 52:Issue 14(2016) Page Start: 1263 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗