1. Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. (23rd September 2022) Authors: Khachariya, Dolar; Stein, Shane; Mecouch, Will; Breckenridge, M. Hayden; Rathkanthiwar, Shashwat; Mita, Seiji; Moody, Baxter; Reddy, Pramod; Tweedie, James; Kirste, Ronny; Sierakowski, Kacper; Kamler, Grzegorz; Bockowski, Michal; Kohn, Erhard; Pavlidis, Spyridon; Collazo, Ramón; Sitar, Zlatko Journal: Applied physics express Issue: Volume 15:Number 10(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗