1. Role of Sb dopant in Ag:GeSx‐based conducting bridge random access memories. Issue 2 (2nd December 2015) Authors: d'Acapito, F.; Souchier, E.; Noé, P.; Blaise, P.; Bernard, M.; Jousseaume, V. Journal: Physica status solidi Issue: Volume 213:Issue 2(2016:Feb.) Page Start: 311 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories. Issue 37 (27th August 2015) Authors: Souchier, E.; D'Acapito, F.; Noé, P.; Blaise, P.; Bernard, M.; Jousseaume, V. Journal: Physical chemistry chemical physics Issue: Volume 17:Issue 37(2015) Page Start: 23931 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗