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Author/Creator Smets, Quentin

3. Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior. (25th April 2016)

Authors:
El Kazzi, Salim; Alireza, A; Bordallo, Caio Cesar Mendes; Smets, Quentin; Desplanque, Ludovic; Wallart, Xavier; Richard, Olivier; Douhard, Bastien; Verhulst, Anne; Collaert, Nadine; Merckling, Clement; Heyns, Marc; Thean, Aaron
Journal:
ECS transactions
Issue:
Volume 72:Number 3(2016)
Page Start:
73
Record Type:
Journal Article
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4. Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications. Issue 9 (6th February 2022)

Authors:
Lee, Kookjin; Ji, Hyunjin; Kim, Yanghee; Kaczer, Ben; Lee, Hyebin; Ahn, Jae‐Pyoung; Choi, Junhee; Grill, Alexander; Panarella, Luca; Smets, Quentin; Verreck, Devin; Van Beek, Simon; Chasin, Adrian; Linten, Dimitri; Na, Junhong; Lee, Jae Woo; De Wolf, Ingrid; Kim, Gyu‐Tae
Journal:
Advanced materials interfaces
Issue:
Volume 9:Issue 9(2022)
Page Start:
n/a
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗