Author/Creator: Slotte, J. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Slotte, J.

1. Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1−x/SiO2 heterostructures investigated by positron annihilation spectroscopy. Issue 11 (24th September 2014)

Authors:: Madia, O.; Segercrantz, N.; Afanas'ev, V.; Stesmans, A.; Souriau, L.; Slotte, J.; Tuomisto, F.
Journal:: Physica status solidi
Issue:: Volume 251:Issue 11(2014:Nov.)
Page Start:: 2211
Record Type:: Journal Article
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2. Review—Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductors. (1st January 2016)

Authors:: Slotte, J.; Makkonen, I.; Tuomisto, F.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 5:Number 4(2016)
Page Start:: P3166
Record Type:: Journal Article
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3. Review—Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductors. (5th February 2016)

Authors:: Slotte, J.; Makkonen, I.; Tuomisto, F.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 5:Number 4(2016)
Page Start:: P3166
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗