1. Effects of Ambient and Annealing Temperature in HfO2 Based RRAM Device Modeling and Circuit-Level Implementation. (1st February 2022) Authors: A., Napolean; Sivamangai, N. M.; Rajesh, S.; Naveenkumar, R.; Sharon, N.; Nithya, N.; Kamalnath, S. Journal: ECS journal of solid state science and technology Issue: Volume 11:Number 2(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effects of Ambient and Annealing Temperature in HfO2 Based RRAM Device Modeling and Circuit-Level Implementation. (1st February 2022) Authors: Napolean, A.; Sivamangai, N. M.; Rajesh, S.; Naveenkumar, R.; Sharon, N.; Nithya, N.; Kamalnath, S. Journal: ECS journal of solid state science and technology Issue: Volume 11:Number 2(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗