1. Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods. (29th June 2021) Authors: Shyam Kumar, C N; Tabean, Saba; Morisset, Audrey; Wyss, Philippe; Lehmann, Mario; Haug, Franz-Josef; Jeangros, Quentin; Hessler-Wyser, Aïcha; Valle, Nathalie; Wirtz, Tom; Eswara, Santhana Journal: Semiconductor science and technology Issue: Volume 36:Number 8(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗