1. A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer. (August 2015) Authors: Shrestha, Niraj Man; Wang, Yuen Yee; Li, Yiming; Chang, Edward Yi Journal: Vacuum Issue: Volume 118(2015) Page Start: 59 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗