1. Effect of asymmetric thin TiN buffer layer for switching in NbOx layer. (29th April 2021) Authors: Hatanaka, R.; Morimoto, M.; Nakamura, S.; Shimizu, T.; Ito, T.; Shingubara, S. Journal: Japanese journal of applied physics Issue: Volume 60:Number SC(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of Au electrode on the resistance change response of HfOx-based ReRAM device under voltage pulse trains. (1st October 2022) Authors: Shingubara, S.; Huang, C.Y.; Hatanaka, R.; Shimizu, T.; Ito, T. Journal: Japanese journal of applied physics Issue: Volume 61:Number SM(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗