Author/Creator: Shi, R.P. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Shi, R.P.

1. Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications. (October 2016)

Authors:: Shi, R.P.; Huang, X.D.; Sin, Johnny K.O.; Lai, P.T.
Journal:: Microelectronics and reliability
Issue:: Volume 65(2016)
Page Start:: 64
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications. (October 2016)

Authors:: Shi, R.P.; Huang, X.D.; Sin, Johnny K.O.; Lai, P.T.
Journal:: Microelectronics and reliability
Issue:: Volume 65(2016)
Page Start:: 64
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Non-conservative dynamics of lattice sites near a migrating interface in a diffusional phase transformation. (1st April 2017)

Authors:: Yang, T.; Gao, Y.; Wang, D.; Shi, R.P.; Chen, Z.; Nie, J.F.; Li, J.; Wang, Y.
Journal:: Acta materialia
Issue:: Volume 127(2017)
Page Start:: 481
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗