1. A novel contact engineering method for transistors based on two-dimensional materials. (10th April 2021) Authors: Sheng, Yaochen; Zhang, LuFang; Li, Feng; Chen, Xinyu; Xie, Zhijian; Nan, Haiyan; Xu, Zihan; Zhang, David Wei; Chen, Jianhao; Pu, Yong; Xiao, Shaoqing; Bao, Wenzhong Journal: Journal of materials science & technology Issue: Volume 69(2021) Page Start: 15 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application. (6th December 2018) Authors: Xu, Hu; Zhang, Haima; Liu, Yawen; Zhang, Simeng; Sun, Yangye; Guo, Zhongxun; Sheng, Yaochen; Wang, Xudong; Luo, Chen; Wu, Xing; Wang, Jianlu; Hu, Weida; Xu, Zihan; Sun, Qingqing; Zhou, Peng; Shi, Jing; Sun, Zhengzong; Zhang, David Wei; Bao, Wenzhong Journal: Advanced functional materials Issue: Volume 29:Number 4(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect. (7th October 2020) Authors: Sheng, Yaochen; Chen, Xinyu; Liao, Fuyou; Wang, Yin; Ma, Jingyi; Deng, Jianan; Guo, Zhongxun; Bu, Sitong; Shen, Hui; Bai, Fuyu; Huang, Daming; Wang, Jianlu; Hu, Weida; Chen, Lin; Zhu, Hao; Sun, Qingqing; Zhou, Peng; Zhang, David Wei; Wan, Jing; Bao, Wenzhong Journal: Advanced Electronic Materials Issue: Volume 7:Number 7(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors. (20th April 2022) Authors: Ma, Jingyi; Chen, Xinyu; Sheng, Yaochen; Tong, Ling; Guo, Xiaojiao; Zhang, Minxing; Luo, Chen; Zong, Lingyi; Xia, Yin; Sheng, Chuming; Wang, Yin; Gou, Saifei; Wang, Xinyu; Wu, Xing; Zhou, Peng; Zhang, David Wei; Wu, Chenjian; Bao, Wenzhong Journal: Journal of materials science & technology Issue: Volume 106(2022) Page Start: 243 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗