1. Interpretation of the 1/C2 Curvature and Discontinuity in Electrochemical Capacitance Voltage Profiling of Heavily Ga Implanted SiGe Followed by Melt Laser Annealing. (2nd December 2020) Authors: Sermage, B.; Tabata, T.; Ren, J.; Priante, G.; Gao, Y. Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 12(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗