1. High‐speed transimpedance amplifier with runtime adaptive bandwidth and power consumption in 0.13 μm SiGe BiCMOS. Issue 2 (1st January 2016) Authors: Schoeniger, D.; Henker, R.; Ellinger, F. Journal: Electronics letters Issue: Volume 52:Issue 2(2016) Page Start: 154 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗