1. Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE. Issue 35 (21st September 2015) Authors: Gogova, D.; Schmidbauer, M.; Kwasniewski, A. Journal: CrystEngComm Issue: Volume 17:Issue 35(2015) Page Start: 6744 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗