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Author/Creator Saugnon, D.

1. Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. (September 2017)

Authors:
Tartarin, J.G.; Lazar, O.; Saugnon, D.; Lambert, B.; Moreau, C.; Bouexiere, C.; Romain-Latu, E.; Rousseau, K.; David, A.; Roux, J.L.
Journal:
Microelectronics and reliability
Issue:
Volume 76/77(2017)
Page Start:
344
Record Type:
Journal Article
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