1. Coherent strain evolution at the initial growth stage of AlN on SiC(0001) proved by in situ synchrotron X-ray diffraction. (8th April 2020) Authors: Suzuki, Hidetoshi; Ishikawa, Fumitaro; Sasaki, Takuo; Takahasi, Masamitu Journal: Applied physics express Issue: Volume 13:Number 5(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE. Issue 11 (24th October 2013) Authors: Sasaki, Takuo; Norman, Andrew G.; Romero, Manuel J.; Al‐Jassim, Mowafak M.; Takahasi, Masamitu; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi; Yamaguchi, Hiroshi; Kumakura, Kazuhide Journal: Physica status solidi Issue: Volume 10:Issue 11(2013:Nov.) Page Start: 1640 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction. (18th July 2017) Authors: Suzuki, Hidetoshi; Sasaki, Takuo; Takahasi, Masamitu; Ohshita, Yoshio; Kojima, Nobuaki; Kamiya, Itaru; Fukuyama, Atsuhiko; Ikari, Tetsuo; Yamaguchi, Masafumi Journal: Japanese journal of applied physics Issue: Volume 56:Number 8(2017)Supplement 2 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Nitride-MBE system for in situ synchrotron X-ray measurements. (5th April 2016) Authors: Sasaki, Takuo; Ishikawa, Fumitaro; Yamaguchi, Tomohiro; Takahasi, Masamitu Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗