1. Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation. (January 2023) Authors: Mii, Toshiki; Sakane, Hitoshi; Harada, Shunta; Kato, Masashi Journal: Materials science in semiconductor processing Issue: Volume 153(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Characterization of the effect of ion irradiation on industrially produced GdBa2Cu3O7−δ superconducting tapes using a slow positron beam. (3rd December 2020) Authors: Yabuuchi, Atsushi; Ozaki, Toshinori; Sakane, Hitoshi; Okazaki, Hiroyuki; Koshikawa, Hiroshi; Yamamoto, Shunya; Yamaki, Tetsuya Journal: Applied physics express Issue: Volume 13:Number 12(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation. (1st February 2023) Authors: Harada, Shunta; Sakane, Hitoshi; Mii, Toshiki; Kato, Masashi Journal: Applied physics express Issue: Volume 16:Number 2(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗