1. (Invited) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors. (17th August 2017) Authors: Sabui, Gourab; Zubialevich, Vitaly Z.; Pampili, Pietro; White, Mary; Parbrook, Peter J.; McLaren, Mathew; Arredondo-Arechavala, Miryam; Shen, Z. John Journal: ECS transactions Issue: Volume 80:Number 7(2017) Page Start: 69 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗