Author/Creator: Rrustemi, B. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Rrustemi, B.

1. A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures. (August 2022)

Authors:: Piotrowicz, C.; Mohamad, B.; Rrustemi, B.; Malbert, N.; Jaud, M.A.; Vandendaele, W.; Charles, M.; Gwoziecki, R.
Journal:: Solid-state electronics
Issue:: Volume 194(2022)
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Record Type:: Journal Article
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2. Effect of doping on Al2O3/GaN MOS capacitance. (August 2022)

Authors:: Rrustemi, B.; Piotrowicz, C.; Jaud, M-A.; Triozon, F.; Vandendaele, W.; Mohamad, B.; Gwoziecki, R.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 194(2022)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗