1. Impact of source/drain and bulk engineering on LFN performance of n- and p-MOSFET. (September 2017) Authors: Ioannidis, E.G.; Rohracher, K.; Roger, F.; Pflanzl, W.C.; Leisenberger, F.P.; Wachmann, E.; Seebacher, E.; Vescoli, V. Journal: Solid-state electronics Issue: Volume 135(2017) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗