1. Growth and structural properties of step-graded, high Sn content GeSn layers on Ge. (24th August 2017) Authors: Aubin, J; Hartmann, J M; Gassenq, A; Rouviere, J L; Robin, E; Delaye, V; Cooper, D; Mollard, N; Reboud, V; Calvo, V Journal: Semiconductor science and technology Issue: Volume 32:Number 9(2017:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗