1. Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy. (19th July 2018) Authors: Khiangte, Krista R; Rathore, Jaswant S; Schmidt, J; Osten, H J; Laha, A; Mahapatra, S Journal: Journal of physics Issue: Volume 51:Number 32(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗