1. An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis. Issue 9 (August 2015) Authors: Shubhakar, K.; Bosman, M.; Neucheva, O.A.; Loke, Y.C.; Raghavan, N.; Thamankar, R.; Ranjan, A.; O'Shea, S.J.; Pey, K.L. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1450 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM. (September 2016) Authors: Ranjan, A.; Raghavan, N.; Molina, J.; O'Shea, S.J.; Shubhakar, K.; Pey, K.L. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 172 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM. (September 2016) Authors: Ranjan, A.; Raghavan, N.; Molina, J.; O'Shea, S.J.; Shubhakar, K.; Pey, K.L. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 172 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Assessing multi-output Gaussian process regression for modeling of non-monotonic degradation trends of light emitting diodes in storage. (November 2020) Authors: Lim, S.L.H.; Duong, P.L.T.; Park, H.; Singh, P.; Tan, C.M.; Raghavan, N. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight. (September 2016) Authors: Shubhakar, K.; Mei, S.; Bosman, M.; Raghavan, N.; Ranjan, A.; O'Shea, S.J.; Pey, K.L. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 204 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight. (September 2016) Authors: Shubhakar, K.; Mei, S.; Bosman, M.; Raghavan, N.; Ranjan, A.; O'Shea, S.J.; Pey, K.L. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 204 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Multiphonon ionization of traps formed in hafnium oxide by electrical stress. Issue 2 (22nd November 2012) Authors: Danilyuk, A. L.; Migas, D. B.; Danilyuk, M. A.; Borisenko, V. E.; Wu, X.; Raghavan, N.; Pey, K. L. Journal: Physica status solidi Issue: Volume 210:Issue 2(2013:Feb.) Page Start: 361 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Role of temperature, MTJ size and pulse-width on STT-MRAM bit-error rate and backhopping. (September 2021) Authors: Tan, J.; Lim, J.H.; Kwon, J.H.; Naik, V.B.; Raghavan, N.; Pey, K.L. Journal: Solid-state electronics Issue: Volume 183(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress. (September 2018) Authors: Feng, X.; Raghavan, N.; Mei, S.; Dong, S.; Pey, K.L.; Wong, H. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 164 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗