1. Defect evolution and dopant activation in laser annealed Si and Ge. (February 2016) Authors: Cristiano, F.; Shayesteh, M.; Duffy, R.; Huet, K.; Mazzamuto, F.; Qiu, Y.; Quillec, M.; Henrichsen, H.H.; Nielsen, P.F.; Petersen, D.H.; La Magna, A.; Caruso, G.; Boninelli, S. Journal: Materials science in semiconductor processing Issue: Volume 42:Part 2(2016:Feb.) Page Start: 188 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Large boron‐interstitial cluster modelling in BF3 plasma implanted silicon. Issue 1 (9th December 2013) Authors: Essa, Z.; Cristiano, F.; Spiegel, Y.; Qiu, Y.; Boulenc, P.; Quillec, M.; Taleb, N.; Zographos, N.; Bedel‐Pereira, E.; Mortet, V.; Burenkov, A.; Hackenberg, M.; Torregrosa, F.; Tavernier, C.; Cristiano, Fuccio; Pichler, Peter; Tavernier, Clément; Windl, Wolfgang Journal: Physica status solidi Issue: Volume 11:Issue 1(2014:Jan.) Page Start: 117 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Simulation of the boron build‐up formation during melting laser thermal annealing. Issue 1 (9th December 2013) Authors: Hackenberg, M.; Huet, K.; Negru, R.; Fisicaro, G.; La Magna, A.; Taleb, N.; Quillec, M.; Pichler, P.; Cristiano, Fuccio; Pichler, Peter; Tavernier, Clément; Windl, Wolfgang Journal: Physica status solidi Issue: Volume 11:Issue 1(2014:Jan.) Page Start: 89 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗