1. Low defect large area semi‐polar (112) GaN grown on patterned (113) silicon. Issue 5 (5th December 2014) Authors: Pristovsek, Markus; Han, Yisong; Zhu, Tongtong; Frentrup, Martin; Kappers, Menno J.; Humphreys, Colin J.; Kozlowski, Grzegorz; Maaskant, Pleun; Corbett, Brian Journal: Physica status solidi Issue: Volume 252:Issue 5(2015:May) Page Start: 1104 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗