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Author/Creator Prechtl, Gerhard

1. A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects. (November 2020)

Authors:
Modolo, Nicola; Meneghini, Matteo; Barbato, Alessandro; Nardo, Arianna; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Sicre, Sebastien; Prechtl, Gerhard; Curatola, Gilberto
Journal:
Microelectronics and reliability
Issue:
Volume 114(2020)
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Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

2. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors. (12th November 2020)

Authors:
Nicola, Modolo; De Santi, Carlo; Minetto, Andrea; Sayadi, Luca; Sicre, Sebastien; Prechtl, Gerhard; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Journal:
Semiconductor science and technology
Issue:
Volume 36:Number 1(2021)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

3. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors. (12th November 2020)

Authors:
Modolo, Nicola; De Santi, Carlo; Minetto, Andrea; Sayadi, Luca; Sicre, Sebastien; Prechtl, Gerhard; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Journal:
Semiconductor science and technology
Issue:
Volume 36:Number 1(2021)
Page Start:
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗