1. Y-shaped double-gate high electron mobility transistor for radio frequency applications. (6th October 2022) Authors: Prasad, Santashraya; Islam, Aminul Journal: International journal of nanoparticles Issue: Volume 14:Number 2/4(2022) Page Start: 181 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗