1. Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation. (December 2019) Authors: Tikhomirov, V G; Gudkov, A G; Agasieva, S V; Dynaiev, D D; Popov, M K; Chizhikov, S V Journal: Journal of physics Issue: Volume 1410(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Research of low noise pHEMT transistors in equipment for microwave radiometry using numerical simulation. (December 2020) Authors: Tikhomirov, V G; Gudkov, A G; Agasieva, S V; Yankevich, V B; Popov, M K; Chizhikov, S V Journal: Journal of physics Issue: Volume 1695(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗