1. Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors. Issue 5 (28th December 2021) Authors: Legallais, Maxime; Lefevre, Gauthier; Martin, Simon; Labau, Sébastien; Bassani, Franck; Pélissier, Bernard; Baron, Thierry; Vauche, Laura; Le Royer, Cyrille; Charles, Matthew; Vandendaele, William; Plissonnier, Marc; Gwoziecki, Romain; Salem, Bassem Journal: Advanced materials interfaces Issue: Volume 9:Issue 5(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗