1. AlN metal–semiconductor field-effect transistors using Si-ion implantation. (6th March 2018) Authors: Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás Journal: Japanese journal of applied physics Issue: Volume 57:Number 4(2018)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Materials and processing issues in vertical GaN power electronics. (May 2018) Authors: Hu, Jie; Zhang, Yuhao; Sun, Min; Piedra, Daniel; Chowdhury, Nadim; Palacios, Tomás Journal: Materials science in semiconductor processing Issue: Volume 78(2018) Page Start: 75 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. The 2018 GaN power electronics roadmap. (26th March 2018) Authors: Amano, H; Baines, Y; Beam, E; Borga, Matteo; Bouchet, T; Chalker, Paul R; Charles, M; Chen, Kevin J; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria Merlyne; Decoutere, Stefaan; Di Cioccio, L; Eckardt, Bernd; Egawa, Takashi; Fay, P; Freedsman, Joseph J; Guido, L; Häberlen, Oliver Journal: Journal of physics Issue: Volume 51:Number 16(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗