1. Amorphous nickel incorporated tin oxide thin film transistors. (11th August 2017) Authors: Yang, Jianwen; Ren, Jinhua; Lin, Dong; Han, Yanbing; Qu, Mingyue; Pi, Shubin; Fu, Ruofan; Zhang, Qun Journal: Journal of physics Issue: Volume 50:Number 35(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer. (25th April 2018) Authors: Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping Journal: Semiconductor science and technology Issue: Volume 33:Number 6(2018:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗