1. Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C. (November 2021) Authors: Agopian, P.G.D.; Carmo, G.J.; Martino, J.A.; Simoen, E.; Peralagu, U.; Parvais, B.; Waldron, N.; Collaert, N. Journal: Solid-state electronics Issue: Volume 185(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗