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- Peng, Disen [remove] 1
- 4H–SiC (Silicon carbide) trench MOSFET -- Breakdown voltage -- Gate oxide reliability -- Specific gate-drain charge -- Integrated Schottky barrier diode -- Reverse recovery 1
- 621.3805 1
- Electronic journals 1
- Journals - contents and abstracts 1
- Microelectronics 1
- Microelectronics -- Periodicals 1
- Microélectronique -- Périodiques 1
- Periodicals 1