1. Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model. (November 2016) Authors: Pelloux-Prayer, J.; Cassé, M.; Triozon, F.; Barraud, S.; Niquet, Y.-M.; Rouvière, J.-L.; Faynot, O.; Reimbold, G. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 175 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model. (November 2016) Authors: Pelloux-Prayer, J.; Cassé, M.; Triozon, F.; Barraud, S.; Niquet, Y.-M.; Rouvière, J.-L.; Faynot, O.; Reimbold, G. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 175 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗